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d a t a sh eet preliminary speci?cation file under integrated circuits, ic17 2000 apr 11 integrated circuits CGY2014TT gsm/dcs/pcs power amplifier
2000 apr 11 2 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT features operating at 3.6 v battery supply power amplifier (pa) output power: 35 dbm in gsm band and 32.5 dbm in dcs/pcs band input power: 0 dbm in gsm band and 3 dbm in dcs/pcs band wide operating temperature range from - 20 to +85 c htssop20 exposed die pad package. applications dual-band systems: low band (lb) from 880 to 915 mhz hand-held transceivers for e-gsm and high band (hb) from 1710 to 1910 mhz for dcs/pcs applications. general description the CGY2014TT is a dual-band gsm/dcs/pcs gaas monolithic microwave integrated circuit (mmic) power amplifier. the circuit is specifically designed to operate at 3.6 v battery supply voltage. the power amplifier requires only a 30 db harmonic low-pass filter to comply with the transmit spurious specification. the voltages applied on pins v dd (drain) control the power of the power amplifier and permit to switch it off. quick reference data notes 1. for conditions, see chapters dc characteristics and ac characteristics. 2. the supply circuit includes a (drain) mos switch with r dson =40m w . the battery voltage is 3.6 v (typical value). ordering information symbol parameter (1) conditions min. typ. max. unit v dd positive supply voltage note 2 - 3.5 5.2 v i dd(lb) gsm positive peak supply current - 2 - a p o(lb)(max) maximum output power in gsm band 34.5 35 - dbm i dd(hb) dcs/pcs positive peak supply current - 1.5 - a p o(hb)(max) maximum output power in dcs/pcs band 32 32.5 - dbm t amb ambient temperature - 20 - +85 c type number package name description version CGY2014TT htssop20 plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm sot527-1
2000 apr 11 3 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT block diagram handbook, full pagewidth CGY2014TT 9 gnd rfo/v dd3lb n.c. rfo/v dd3hb rfi lb rfi hb 13, 14 fca180 v dd1hb v dd1lb v dd2lb v dd2hb 7 gnd1 lb 8 6 2 15 3 4, 5 17, 18 1, 10, 11, 12, 16, 19, 20 fig.1 block diagram.
2000 apr 11 4 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT pinning symbol pin description n.c. 1 not connected rfi hb 2 dcs/pcs power ampli?er input v dd1hb 3 dcs/pcs ?rst stage supply voltage v dd2hb 4 dcs/pcs second stage supply voltage v dd2hb 5 dcs/pcs second stage supply voltage v dd2lb 6 gsm second stage supply voltage v dd1lb 7 gsm ?rst stage supply voltage gnd1 lb 8 gsm ?rst stage ground rfi lb 9 gsm power ampli?er input n.c. 10 not connected n.c. 11 not connected n.c. 12 not connected rfo/v dd3lb 13 gsm power ampli?er output and third stage supply voltage rfo/v dd3lb 14 gsm power ampli?er output and third stage supply voltage gnd 15 ground n.c. 16 internal connection to ground; pin should not be connected to the board rfo/v dd3hb 17 dcs/pcs power ampli?er output and third stage supply voltage rfo/v dd3hb 18 dcs/pcs power ampli?er output and third stage supply voltage n.c. 19 not connected n.c. 20 not connected - exposed die ground functional description operating conditions the CGY2014TT is designed to meet the european telecommunications standards institute (etsi) gsm documents, the ets 300 577 specification , which are defined as follows: t on = 570 m s t = 4.16 ms duty cycle d = 1 / 8 . multislot operation can be implemented provided that the application circuit does not drive the ic beyond the limiting values. power ampli?er the gsm and dcs/pcs power amplifiers consist of three cascaded gain stages with an open-drain configuration. each drain has to be loaded externally by an adequate reactive circuit which also has to be a dc path to the supply. handbook, halfpage CGY2014TT fca181 1 2 3 4 5 6 7 8 9 10 n.c. rfi hb v dd1hb v dd2hb v dd2hb v dd2lb v dd1lb gnd1 lb rfi lb n.c. n.c. n.c. rfo/v dd3hb rfo/v dd3hb n.c. gnd rfo/v dd3lb rfo/v dd3lb n.c. n.c. 20 19 18 17 16 15 14 13 12 11 fig.2 pin configuration.
2000 apr 11 5 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. the total power dissipation is measured under gsm pulse conditions in a good thermal environment; see application note (tbf). thermal characteristics note 1. this thermal resistance is measured under gsm pulse conditions in a good thermal environment; see application note (tbf). dc characteristics v dd = 3.5 v; t amb =25 c; general operating conditions applied; peak current values measured during burst; unless otherwise speci?ed. note 1. the supply circuit includes a (drain) mos switch with r dson =40m w . the battery voltage is 3.6 v (typical value). symbol parameter conditions max. unit v dd positive supply voltage 5.2 v t j(max) maximum operating junction temperature 150 c t stg storage temperature 150 c p tot total power dissipation note 1 2.0 w p i(lb) gsm input power 10 dbm p i(hb) dcs/pcs input power 10 dbm symbol parameter conditions value unit r th(j-c) thermal resistance from junction to case note 1 30 k/w symbol parameter conditions min. typ. max. unit supplies: pins v dd1lb , v dd2lb , rfo/v dd3lb , v dd1hb , v dd2hb and rfo/v dd3hb v dd positive supply voltage note 1 0 3.5 5.2 v i dd(lb) gsm positive peak supply current p i(lb) = 0 dbm - 2 - a i dd(hb) dcs/pcs positive peak supply current p i(hb) = 3 dbm - 1.5 - a
2000 apr 11 6 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT ac characteristics v dd = 3.5 v; t amb =25 c; measured on the philips demoboard (see fig.8). notes 1. the device is adjusted to provide nominal load power into a 50 w load. the device is switched off and a 6 : 1 load replaces the 50 w load. the device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. 2. the power amplifier can be matched to pcs and or dcs/pcs operation through optimization of the matching circuit; see application note (tbf). 3. isolation can be improved to - 20 dbm (typical value) with a pin diode switched in the dcs output matching. symbol parameter conditions min. typ. max. unit low band: gsm power ampli?er p i(lb) input power - 2 0 +2 dbm f rf(lb) rf frequency range 880 - 915 mhz p o(lb)(max) maximum output power see figs 3 and 4 34.5 35 - dbm h lb ef?ciency see fig.3 50 55 - % p o(lb)(min) minimum output power v dd =0v; p i(lb) = 0 dbm -- 35 - dbm n rx(lb) output noise in rx band p i(lb) = 0 dbm f rf = 925 to 935 mhz --- 117 dbm/hz f rf = 935 to 960 mhz --- 129 dbm/hz h2 lb 2nd harmonic level p i(lb) = 0 dbm --- 35 dbc h3 lb 3rd harmonic level p i(lb) = 0 dbm --- 35 dbc stab lb stability p i(lb) = 0 dbm; note 1 --- 60 dbc high band: dcs/pcs power ampli?er; note 2 p i(hb) input power 2 3 5 dbm f rf(hb) rf frequency range for dcs operation 1710 - 1785 mhz p o(hb)(max) maximum output power see figs 5 and 6 32 32.5 - dbm h hb ef?ciency see fig.5 38 40 - % p o(hb)(min) minimum output power v dd =0v; p i(hb) = 3 dbm -- 32 - dbm a hb high band isolation when low band is operating v dd(lb) = 3.5 v; p i(lb) = 0 dbm; v dd(hb) =0v; p i(hb) = 3 dbm; note 3 - 0 - dbm n rx(hb) output noise in rx band p i(hb) = 3 dbm --- 121 dbm/hz h2 hb 2nd harmonic level p i(hb) = 3 dbm --- 35 dbc h3 hb 3rd harmonic level p i(hb) = 3 dbm --- 35 dbc stab hb stability p i(hb) = 3 dbm; note 1 --- 60 dbc
2000 apr 11 7 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT performance characteristics in gsm band handbook, halfpage 800 850 p o (dbm) 900 1000 37 33 31 35 h (%) 60 40 20 0 950 f rf (mhz) fca171 (3) (2) (1) (3) (2) (1) output power efficiency fig.3 output power and efficiency as a function of the frequency. (1) t amb =85 c. (2) t amb =25 c. (3) t amb = - 20 c. v dd1(lb) =3v. v dd2(lb) =v dd3(lb) = 3.5 v. p i(lb) = 0 dbm. handbook, halfpage 01 p o (dbm) 24 40 30 10 0 20 3 v dd (v) fca176 (1) (2) (3) fig.4 output power as a function of the supply voltage. (1) t amb =85 c. (2) t amb =25 c. (3) t amb = - 20 c. f rf(lb) = 900 mhz. p i(lb) = 0 dbm. v dd1(lb) =3v. v dd =v dd2(lb) =v dd3(lb) . performance characteristics in dcs band handbook, halfpage 1650 1700 p o (dbm) 1750 1850 35.5 34.5 32.5 31.5 33.5 h (%) 55 45 25 15 35 1800 f rf (mhz) fca172 (3) (2) (1) (3) (2) (1) output power efficiency fig.5 output power and efficiency as a function of the frequency. (1) t amb =85 c. (2) t amb =25 c. (3) t amb = - 20 c. v dd1(hb) =3v. v dd2(hb) =v dd3(hb) = 3.5 v. p i(hb) = 3 dbm. handbook, halfpage 01 p o (dbm) 24 40 30 10 0 20 3 v dd (v) fca173 (1) (2) (3) fig.6 output power as a function of the supply voltage. (1) t amb =85 c. (2) t amb =25 c. (3) t amb = - 20 c. f rf(hb) = 1750 mhz. p i(hb) = 3 dbm. v dd1(hb) =3v. v dd =v dd2(hb) =v dd3(hb) .
2000 apr 11 8 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT application information handbook, full pagewidth fca174 1 2 3 4 5 6 7 8 9 10 11 12 20 19 18 17 16 15 14 13 CGY2014TT trl2 trl1 n.c. trl3 10 nf 3.9 nh 3.3 nh 100 pf 1 pf v d23dcs v d1dcs v d1gsm rf in gsm rfi lb rf in dcs 100 pf 1 nf 4.7 pf 6 pf 1 nf 4 pf trl6 trl4 trl5 ba891 56 pf 4.7 pf 9.1 pf 100 pf 3 pf 2.7 pf 5.6 pf 3.3 k w 1 nf n.c. n.c. n.c. n.c. n.c. n.c. (1) gnd rfi hb v dd1hb v dd2hb v dd2hb v dd2lb v dd1lb rfo/v dd3hb rf out dcs rf out gsm vpin rfo/v dd3hb rfo/v dd3lb rfo/v dd3lb gnd1 lb v d23gsm fig.7 application diagram. (1) pin 16 is internally connected to ground and should not be connected to the board. (2) transmission lines: thickness 0.4 mm, substrate fr4 and e r = 4.7. trl1: width = 500 m m, length = 4.5 mm. trl2: width = 500 m m, length = 20 mm. trl3: width = 150 m m, length = 30 mm. trl4: width = 500 m m, length = 4 mm. trl5: width = 500 m m, length = 1.5 mm. trl6: width = 500 m m, length = 13 mm.
2000 apr 11 9 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT handbook, full pagewidth fca175 CGY2014TT 3 pf 4.7 pf 9.1 pf 4 pf 1 pf 100 pf 100 pf 1 nf 6 pf 3.3 nh 4.7 pf 3.9 nh 10 nf 2.7 pf 100 pf 5.6 pf ba891 56 pf 3.3 k w 1 nf fig.8 part of layout of philips demoboard. dimensions: approximately 20 20 mm
2000 apr 11 10 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT package outline unit a 1 a 2 a 3 b p cd (1) e (2) z (1) d h ell p y w v q references outline version european projection issue date iec jedec eiaj mm 0.15 0.05 0.95 0.80 0.30 0.19 0.20 0.09 6.6 6.4 4.3 4.1 e h h e 3.10 2.90 4.5 4.3 0.65 6.6 6.2 0.5 0.2 8 0 o o 0.13 0.1 0.2 1.0 dimensions (mm are the original dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic interlead protrusions of 0.25 mm maximum per side are not included. 0.75 0.50 sot527-1 99-02-06 99-11-12 w m b p d d h e h z heathsink side e 0.25 110 20 11 q a a 1 a 2 l p detail x l (a ) 3 h e e c v m a x a y 0 2.5 5 mm scale htssop20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm sot527-1 a max. 1.10 pin 1 index
2000 apr 11 11 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2000 apr 11 12 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. package soldering method wave reflow (1) bga, lfbga, sqfp, tfbga not suitable suitable hbcc, hlqfp, hsqfp, hsop, htqfp, htssop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable
2000 apr 11 13 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT data sheet status note 1. please consult the most recently issued data sheet before initiating or completing a design. data sheet status product status definitions (1) objective speci?cation development this data sheet contains the design target or goal speci?cations for product development. speci?cation may change in any manner without notice. preliminary speci?cation quali?cation this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. product speci?cation production this data sheet contains ?nal speci?cations. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 apr 11 14 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT notes
2000 apr 11 15 philips semiconductors preliminary speci?cation gsm/dcs/pcs power ampli?er CGY2014TT notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 2000 69 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland : al.jerozolimskie 195 b, 02-222 warsaw, tel. +48 22 5710 000, fax. +48 22 5710 001 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2886, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 3341 299, fax.+381 11 3342 553 printed in the netherlands 403506/01/pp 16 date of release: 2000 apr 11 document order number: 9397 750 06934

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